Ceramics Products
TaC Coated Graphite Wafer Carrier
For GaN and SiC Thin Film Deposition Equipment
Momentive Technologies offers a proprietary coating technology known as Tantalum Carbide (TaC) coating. With its high temperature
stability and high chemical resistance, TaC enhances the life of graphite reactor components and improves process yield and product quality in the GaN and SiC device productions of LED, deep UV, and power electronics.
Key Features
- Temperature stability > 2200 °C
- Ultra high purity
- Resistance to H2, NH3, and SiH4
- Resistance to thermal stock
- Strong adhesion to graphite
- Conformal coating coverage
- Size up to 750 mm diameter
Potential Applications
- Wafer carrier
- Inductive heating susceptor
- Resistive heating element
- Satellite disk
- Showerhead
- Injection nozzle
- Masking ring
- Heat shield
TaC Coating with High Crystallinity and Excellent Uniformity
Corrosion Resistance Comparison of TaC & SiC Coatings in NH3 at 1500 °C
Typical Property Comparison of TaC and SiC Coatings
| Density (gm/cm3) | Emissivity(1) | CTE (x10-6/K) | Hardness (HK) | Resistance (Ohm-cm) | Thermal Stability | Etch Rate(2) in NH3 (μm/hr) | Etch Rate(3) in H3 (μm/hr) | Thickness Variation | Graphite Dimension Change | |
|---|---|---|---|---|---|---|---|---|---|---|
|
TaC |
14.3 |
0.3 |
6.3 |
2000 |
1×10-5 |
>2200 °C |
0.2 |
0.1 |
~5% |
~17 μm |
|
SiC |
3.2 |
0.8 |
4.5 |
2800 |
2×10-3 |
<1600 °C |
1.5 |
1.7 |
~10% |
~100 μm |
Note: Test data. Actual results may vary.
Typical properties are average data and are not to be used as or to develop specifications.
(1) Emissivity is measured at 950nm and 1000 °C.
(2) Etch rate in NH3 is measured at 1400 °C and 500 Torr.
(3) Etch rate in H2 is measured at 1400 °C and 760 Torr.
Download the product datasheet
